BZT52B12S vs BZX84B12W-AU_R2_000A1 feature comparison

BZT52B12S Sangdest Microelectronics (Nanjing) Co Ltd

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BZX84B12W-AU_R2_000A1 PanJit Semiconductor

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD PAN JIT INTERNATIONAL INC
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.2 W 0.2 W
Reference Voltage-Nom 12 V 12 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Voltage Tol-Max 2% 2%
Working Test Current 5 mA 5 mA
Base Number Matches 2 1
Package Description R-PDSO-G3
Dynamic Impedance-Max 25 Ω
Knee Impedance-Max 150 Ω
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101
Reverse Current-Max 0.1 µA
Reverse Test Voltage 8 V

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Compare BZX84B12W-AU_R2_000A1 with alternatives