BZD27C62P-E3-18 vs BZD27C62P feature comparison

BZD27C62P-E3-18 Vishay Intertechnologies

Buy Now Datasheet

BZD27C62P Galaxy Microelectronics

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code DO-219AB SOD-123FL
Package Description SMF, 2 PIN
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 13 Weeks
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Dynamic Impedance-Max 80 Ω 80 Ω
JEDEC-95 Code DO-219AB
JESD-30 Code R-PDSO-F2 R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.3 W 0.8 W
Reference Voltage-Nom 62 V 62 V
Reverse Current-Max 1 µA 5 µA
Reverse Test Voltage 47 V 51 V
Surface Mount YES YES
Technology ZENER AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Voltage Temp Coeff-Max 80.6 mV/°C
Voltage Tol-Max 6.45% 6.4%
Working Test Current 10 mA 10 mA
Base Number Matches 1 5
Breakdown Voltage-Max 66 V
Breakdown Voltage-Min 58 V
Breakdown Voltage-Nom 62 V
Clamping Voltage-Max 86.5 V
Forward Voltage-Max (VF) 1.2 V
Non-rep Peak Rev Power Dis-Max 150 W
Rep Pk Reverse Voltage-Max 51 V

Compare BZD27C62P-E3-18 with alternatives