BZD27C5V6P
vs
BZD27C5V6P-M-18
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
VISHAY SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
5.9 V
Breakdown Voltage-Min
5.2 V
Breakdown Voltage-Nom
5.6 V
Clamping Voltage-Max
8.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
ZENER DIODE
Dynamic Impedance-Max
4 Ω
2 Ω
Forward Voltage-Max (VF)
1.2 V
JESD-30 Code
R-PDSO-F2
R-PDSO-F2
Non-rep Peak Rev Power Dis-Max
150 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.8 W
0.8 W
Reference Voltage-Nom
5.6 V
5.6 V
Rep Pk Reverse Voltage-Max
4.6 V
Reverse Current-Max
1500 µA
Reverse Test Voltage
4.6 V
Surface Mount
YES
YES
Technology
AVALANCHE
ZENER
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Voltage Tol-Max
7.1%
7.14%
Working Test Current
100 mA
100 mA
Base Number Matches
5
2
Pbfree Code
Rohs Code
Part Package Code
DO-219AB
Package Description
R-PDSO-F2
Pin Count
2
JEDEC-95 Code
DO-219AB
JESD-609 Code
e3
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
Compare BZD27C5V6P with alternatives
Compare BZD27C5V6P-M-18 with alternatives