BZD27C39PRV vs BZD27C39P feature comparison

BZD27C39PRV Taiwan Semiconductor

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BZD27C39P Galaxy Microelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description ROHS COMPLIANT, PLASTIC, SUB SMA, 2 PIN
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Dynamic Impedance-Max 40 Ω 40 Ω
JESD-30 Code R-PDSO-F2 R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 0.8 W
Reference Standard AEC-Q101
Reference Voltage-Nom 39 V 39 V
Surface Mount YES YES
Technology ZENER AVALANCHE
Terminal Finish MATTE TIN
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Voltage Tol-Max 5.13% 5.1%
Working Test Current 10 mA 10 mA
Base Number Matches 1 5
Part Package Code SOD-123FL
Breakdown Voltage-Max 41 V
Breakdown Voltage-Min 37 V
Breakdown Voltage-Nom 39 V
Clamping Voltage-Max 54.1 V
Forward Voltage-Max (VF) 1.2 V
Non-rep Peak Rev Power Dis-Max 150 W
Rep Pk Reverse Voltage-Max 33 V
Reverse Current-Max 5 µA
Reverse Test Voltage 33 V

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