BZD27C200PHRQG vs BZD27C200PHRT feature comparison

BZD27C200PHRQG Taiwan Semiconductor

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BZD27C200PHRT Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Category CO2 Kg 8.7
Compliance Temperature Grade Military: -55C to +175C
EU RoHS Version RoHS 2 (2015/863/EU)
EU RoHS Exemptions 7(a), 7(c)-I
Candidate List Date 2020-01-16
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V6.22
Qualifications AEC-Q101
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 750 Ω 750 Ω
JESD-30 Code R-PDSO-F2 R-PDSO-F2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.3 W 2.3 W
Reference Standard AEC-Q101; IEC-61249-2-21 AEC-Q101; IEC-61249-2-21; IEC-60-1
Reference Voltage-Nom 200 V 200 V
Reverse Current-Max 1 µA 1 µA
Reverse Test Voltage 150 V 150 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Finish MATTE TIN MATTE TIN
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Voltage Temp Coeff-Max 260 mV/°C 260 mV/°C
Voltage Tol-Max 6% 6%
Working Test Current 5 mA 5 mA
Base Number Matches 1 2

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