BZD27C200P vs BZD27C200PHRHG feature comparison

BZD27C200P Galaxy Microelectronics

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BZD27C200PHRHG Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code SOD-123FL
Package Description SOD-123FL, 2 PIN
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 212 V
Breakdown Voltage-Min 188 V
Breakdown Voltage-Nom 200 V
Clamping Voltage-Max 254 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE ZENER DIODE
Dynamic Impedance-Max 500 Ω 750 Ω
Forward Voltage-Max (VF) 1.2 V
JESD-30 Code R-PDSO-F2 R-PDSO-F2
Non-rep Peak Rev Power Dis-Max 150 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.8 W 2.3 W
Reference Voltage-Nom 200 V 200 V
Rep Pk Reverse Voltage-Max 160 V
Reverse Current-Max 5 µA 1 µA
Reverse Test Voltage 160 V 150 V
Surface Mount YES YES
Technology AVALANCHE ZENER
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Voltage Tol-Max 6% 6%
Working Test Current 5 mA 5 mA
Base Number Matches 6 1
ECCN Code EAR99
HTS Code 8541.10.00.50
JESD-609 Code e3
Moisture Sensitivity Level 1
Reference Standard AEC-Q101; IEC-61249-2-21
Terminal Finish MATTE TIN
Voltage Temp Coeff-Max 260 mV/°C

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