BZD27-C47T/R
vs
BZD27C470
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Package Description
O-LELF-R2
O-LELF-N2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
44 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
65.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LELF-R2
O-LELF-N2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
NOT APPLICABLE
Non-rep Peak Rev Power Dis-Max
300 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.8 W
0.8 W
Qualification Status
Not Qualified
Not Qualified
Reverse Current-Max
5 µA
Surface Mount
YES
YES
Technology
AVALANCHE
ZENER
Terminal Finish
TIN
TIN
Terminal Form
WRAP AROUND
NO LEAD
Terminal Position
END
END
Base Number Matches
1
2
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Compare BZD27-C47T/R with alternatives
Compare BZD27C470 with alternatives