BZD27-C47/T3 vs SMAJP4KE47AE3 feature comparison

BZD27-C47/T3 NXP Semiconductors

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SMAJP4KE47AE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS MICROSEMI CORP
Package Description O-LELF-R2 PLASTIC, DO-214BA, SMAJ, 2 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 44 V 44.7 V
Case Connection ISOLATED
Clamping Voltage-Max 65.5 V 64.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 300 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.8 W 1.52 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN
Terminal Form WRAP AROUND C BEND
Terminal Position END DUAL
Base Number Matches 1 10
Part Package Code DO-214AC
Pin Count 2
Breakdown Voltage-Max 49.4 V
Breakdown Voltage-Nom 47 V
JEDEC-95 Code DO-214AC
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 40.2 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare BZD27-C47/T3 with alternatives

Compare SMAJP4KE47AE3 with alternatives