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BZD27-C47,135 vs BZD27-C470T/R feature comparison

BZD27-C47,135 NXP Semiconductors

Buy Now Datasheet

BZD27-C470T/R NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description O-LELF-R2 O-LELF-R2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 44 V 440 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 65.5 V 655 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2 O-LELF-R2
Non-rep Peak Rev Power Dis-Max 300 W 300 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.8 W 0.8 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Diodes » Transient Suppressors
Diodes » Transient Suppressors

Compare BZD27-C47,135 with alternatives

Compare BZD27-C470T/R with alternatives