BZD27-C47,115 vs BZD27C470 feature comparison

BZD27-C47,115 NXP Semiconductors

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BZD27C470 NXP Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description O-LELF-R2 O-LELF-N2
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 44 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 65.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2 O-LELF-N2
Non-rep Peak Rev Power Dis-Max 300 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.8 W 0.8 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE ZENER
Terminal Form WRAP AROUND NO LEAD
Terminal Position END END
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Base Number Matches 1 2
Rohs Code Yes
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Terminal Finish TIN

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Compare BZD27C470 with alternatives