BZD27-C360T/R
vs
BZD27-C36,135
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
Package Description |
O-LELF-R2
|
O-LELF-R2
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Breakdown Voltage-Min |
340 V
|
34 V
|
Case Connection |
ISOLATED
|
ISOLATED
|
Clamping Voltage-Max |
498 V
|
50.1 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
Non-rep Peak Rev Power Dis-Max |
300 W
|
300 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
0.8 W
|
0.8 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reverse Current-Max |
5 µA
|
5 µA
|
Surface Mount |
YES
|
YES
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Base Number Matches |
1
|
1
|
Operating Temperature-Min |
|
-65 °C
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare BZD27-C360T/R with alternatives
Compare BZD27-C36,135 with alternatives