BYX82-TAP
vs
BYW52-TR
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY SEMICONDUCTORS
VISHAY SEMICONDUCTORS
Package Description
E-LALF-W2
E-LALF-W2
Pin Count
2
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
JESD-30 Code
E-LALF-W2
E-LALF-W2
JESD-609 Code
e2
e2
Moisture Sensitivity Level
1
1
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
2 A
2 A
Package Body Material
GLASS
GLASS
Package Shape
ELLIPTICAL
ELLIPTICAL
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
260
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Recovery Time-Max
4 µs
4 µs
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin/Silver (Sn96.5Ag3.5)
Tin/Silver (Sn96.5Ag3.5)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
30
30
Base Number Matches
2
2
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