BYW172G-TR
vs
1N5551TIN/LEAD
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
VISHAY SEMICONDUCTORS
CENTRAL SEMICONDUCTOR CORP
Package Description
E-LALF-W2
Pin Count
2
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
FAST SOFT RECOVERY
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1 V
JESD-30 Code
E-LALF-W2
E-LALF-W2
JESD-609 Code
e2
e0
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
100 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
200 °C
Operating Temperature-Min
-55 °C
-65 °C
Output Current-Max
3 A
3 A
Package Body Material
GLASS
GLASS
Package Shape
ELLIPTICAL
ELLIPTICAL
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
400 V
400 V
Reverse Recovery Time-Max
0.1 µs
2 µs
Surface Mount
NO
NO
Technology
AVALANCHE
Terminal Finish
Tin/Silver (Sn/Ag)
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Base Number Matches
2
1
Date Of Intro
2018-01-30
Additional Feature
HIGH RELIABILITY
Reverse Current-Max
1 µA
Compare BYW172G-TR with alternatives
Compare 1N5551TIN/LEAD with alternatives