BYW172G-TAP
vs
1N6616
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY SEMICONDUCTORS
|
DIGITRON SEMICONDUCTORS
|
| Package Description |
E-LALF-W2
|
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Samacsys Manufacturer |
Vishay
|
|
| Application |
FAST SOFT RECOVERY
|
ULTRA FAST RECOVERY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
1.7 V
|
| JESD-30 Code |
E-LALF-W2
|
O-XALF-W2
|
| JESD-609 Code |
e2
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
100 A
|
100 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
GLASS
|
UNSPECIFIED
|
| Package Shape |
ELLIPTICAL
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
400 V
|
400 V
|
| Reverse Recovery Time-Max |
0.1 µs
|
0.07 µs
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
|
| Terminal Finish |
Tin/Silver (Sn/Ag)
|
TIN LEAD
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
2
|
3
|
| Reverse Current-Max |
|
1 µA
|
|
|
|
Compare BYW172G-TAP with alternatives
Compare 1N6616 with alternatives