BYV79EB-100T/R
vs
UGB18CCTHE3_A/I
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
VISHAY INTERTECHNOLOGY INC
Package Description
R-PSSO-G2
D2PAK-3/2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
Additional Feature
SURGE CAPABILITY
FREE WHEELING DIODE
Application
ULTRA FAST SOFT RECOVERY
EFFICIENCY
Case Connection
CATHODE
CATHODE
Configuration
SINGLE
COMMON CATHODE, 2 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.4 V
1.2 V
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Non-rep Pk Forward Current-Max
160 A
175 A
Number of Elements
1
2
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
14 A
9 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
100 V
150 V
Reverse Recovery Time-Max
0.03 µs
0.03 µs
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
1
1
Rohs Code
Factory Lead Time
40 Weeks
Date Of Intro
2019-07-04
JEDEC-95 Code
TO-263AB
Operating Temperature-Min
-65 °C
Reference Standard
AEC-Q101
Reverse Current-Max
10 µA
Reverse Test Voltage
150 V
Compare BYV79EB-100T/R with alternatives
Compare UGB18CCTHE3_A/I with alternatives