BYV79EB-100T/R vs UGB18BCTHE3_A/I feature comparison

BYV79EB-100T/R NXP Semiconductors

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UGB18BCTHE3_A/I Vishay Intertechnologies

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS VISHAY INTERTECHNOLOGY INC
Package Description R-PSSO-G2 D2PAK-3/2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Additional Feature SURGE CAPABILITY FREE WHEELING DIODE
Application ULTRA FAST SOFT RECOVERY EFFICIENCY
Case Connection CATHODE CATHODE
Configuration SINGLE COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.4 V 1.2 V
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Non-rep Pk Forward Current-Max 160 A 175 A
Number of Elements 1 2
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 14 A 9 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.03 µs 0.03 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 1 1
Rohs Code Yes
Factory Lead Time 40 Weeks
Date Of Intro 2019-07-04
JEDEC-95 Code TO-263AB
Operating Temperature-Min -65 °C
Reference Standard AEC-Q101
Reverse Current-Max 10 µA
Reverse Test Voltage 100 V

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