BYM36E/20133
vs
BYM36E/22112
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Package Description
O-LALF-W2
O-LALF-W2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
FAST SOFT RECOVERY
FAST SOFT RECOVERY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.78 V
1.78 V
JESD-30 Code
O-LALF-W2
O-LALF-W2
Non-rep Pk Forward Current-Max
65 A
65 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
2.9 A
2.9 A
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Reverse Current-Max
5 µA
5 µA
Reverse Recovery Time-Max
0.15 µs
0.15 µs
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Compare BYM36E/20133 with alternatives
Compare BYM36E/22112 with alternatives