BYM12-300HE3_A/I vs 1N5621US feature comparison

BYM12-300HE3_A/I Vishay Intertechnologies

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1N5621US Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Date Of Intro 2017-08-19
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY HIGH RELIABILITY
Application EFFICIENCY
Breakdown Voltage-Min 300 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JEDEC-95 Code DO-213AB
JESD-30 Code O-LELF-R2 O-LELF-R2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Output Current-Max 1 A 1 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 250
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 300 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.05 µs 0.3 µs
Reverse Test Voltage 300 V
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) TIN LEAD
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 5
Pbfree Code No
Package Description HERMETIC SEALED, GLASS, D-5A, 2 PIN
Pin Count 2
Samacsys Manufacturer Microsemi Corporation
Qualification Status Not Qualified

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