BYG20D-M3/TR vs ER2D feature comparison

BYG20D-M3/TR Vishay Semiconductors

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ER2D Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY SEMICONDUCTORS SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature FREE WHEELING DIODE LOW POWER LOSS
Application ULTRA FAST SOFT RECOVERY EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.4 V 0.95 V
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 30 A 50 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1.5 A 2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 1 µA 5 µA
Reverse Recovery Time-Max 0.075 µs 0.035 µs
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 4
Rohs Code Yes
Qualification Status Not Qualified
Reverse Test Voltage 200 V

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