BYG10MHE3_A/I vs BYG10M-M3/TR feature comparison

BYG10MHE3_A/I Vishay Intertechnologies

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BYG10M-M3/TR Vishay Semiconductors

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC VISHAY SEMICONDUCTORS
Package Description SMA, 2 PIN R-PDSO-C2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
Additional Feature FREE WHEELING DIODE, LOW LEAKAGE CURRENT FREE WHEELING DIODE
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.15 V
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1.5 A 1.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 4 µs 4 µs
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 2
Operating Temperature-Max 150 °C

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