BYG10G-M3/TR3 vs BYG10GHE3_A/I feature comparison

BYG10G-M3/TR3 Vishay Semiconductors

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BYG10GHE3_A/I Vishay Intertechnologies

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Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY SEMICONDUCTORS VISHAY INTERTECHNOLOGY INC
Package Description R-PDSO-C2 SMA, 2 PIN
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature FREE WHEELING DIODE FREE WHEELING DIODE, LOW LEAKAGE CURRENT
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1.5 A 1.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Recovery Time-Max 4 µs 4 µs
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 2 1
Rohs Code Yes
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
Forward Voltage-Max (VF) 1.15 V
Reference Standard AEC-Q101
Reverse Current-Max 1 µA

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