BUZ73ALH vs BSC22DN20NS3GATMA1 feature comparison

BUZ73ALH Infineon Technologies AG

Buy Now Datasheet

BSC22DN20NS3GATMA1 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes No
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PDSO-F5
Pin Count 3 8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 120 mJ 30 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 5.5 A 7 A
Drain-source On Resistance-Max 0.6 Ω 0.225 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PDSO-N8
Number of Elements 1 1
Number of Terminals 3 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 22 A 28 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Form THROUGH-HOLE NO LEAD
Terminal Position SINGLE DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Case Connection DRAIN
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish Tin (Sn)
Transistor Application SWITCHING

Compare BUZ73ALH with alternatives

Compare BSC22DN20NS3GATMA1 with alternatives