BUZ71 vs MTD20N06HDLT4 feature comparison

BUZ71 North American Philips Discrete Products Div

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MTD20N06HDLT4 Motorola Mobility LLC

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Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV MOTOROLA INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 12 A 20 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 40 W 40 W
Surface Mount NO YES
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 20 4
Package Description SMALL OUTLINE, R-PSSO-G2
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
DS Breakdown Voltage-Min 60 V
Drain-source On Resistance-Max 0.07 Ω
JESD-30 Code R-PSSO-G2
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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