BUZ36
vs
2N6766
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
MOTOROLA INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
22 A
30 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
e0
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
150 W
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Base Number Matches
3
3
HTS Code
8541.29.00.95
Case Connection
DRAIN
DS Breakdown Voltage-Min
200 V
Drain-source On Resistance-Max
0.085 Ω
Feedback Cap-Max (Crss)
500 pF
JEDEC-95 Code
TO-204AE
JESD-30 Code
O-MBFM-P2
Number of Terminals
2
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Power Dissipation Ambient-Max
150 W
Pulsed Drain Current-Max (IDM)
60 A
Qualification Status
Not Qualified
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
225 ns
Turn-on Time-Max (ton)
135 ns
Compare BUZ36 with alternatives
Compare 2N6766 with alternatives