BUZ345
vs
MTH25N10
feature comparison
All Stats
Differences Only
Rohs Code
Yes
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
MOTOROLA INC
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
280 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
41 A
25 A
Drain-source On Resistance-Max
0.045 Ω
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-218AA
TO-218AC
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
150 W
Pulsed Drain Current-Max (IDM)
164 A
105 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
3
HTS Code
8541.29.00.95
Case Connection
DRAIN
Feedback Cap-Max (Crss)
400 pF
JESD-609 Code
e0
Power Dissipation Ambient-Max
150 W
Terminal Finish
TIN LEAD
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
450 ns
Turn-on Time-Max (ton)
510 ns
Compare BUZ345 with alternatives
Compare MTH25N10 with alternatives