BUZ341
vs
IRFP250NPBF
feature comparison
All Stats
Differences Only
Rohs Code
No
Yes
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SIEMENS A G
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
790 mJ
315 mJ
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
33 A
30 A
Drain-source On Resistance-Max
0.07 Ω
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
350 pF
JEDEC-95 Code
TO-218
TO-247AC
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
170 W
Power Dissipation-Max (Abs)
170 W
214 W
Pulsed Drain Current-Max (IDM)
132 A
120 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
920 ns
Turn-on Time-Max (ton)
230 ns
Base Number Matches
1
1
Factory Lead Time
17 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Case Connection
DRAIN
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare BUZ341 with alternatives
Compare IRFP250NPBF with alternatives