BUZ32HXKSA1 vs BUZ31H3046 feature comparison

BUZ32HXKSA1 Infineon Technologies AG

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BUZ31H3046 Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB TO-262AA
Package Description GREEN, PLASTIC, TO-220, 3 PIN GREEN, PLASTIC, TO-262, 3 PIN
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 120 mJ 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 9.5 A 14.5 A
Drain-source On Resistance-Max 0.4 Ω 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-262AA
JESD-30 Code R-PSFM-T3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 38 A 58 A
Qualification Status Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

Compare BUZ32HXKSA1 with alternatives

Compare BUZ31H3046 with alternatives