BUZ32H3045AATMA1
vs
BSC22DN20NS3GATMA1
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Not Recommended
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Part Package Code
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PDSO-F5
Pin Count
4
8
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
120 mJ
30 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
9.5 A
7 A
Drain-source On Resistance-Max
0.4 Ω
0.225 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AA
JESD-30 Code
R-PSSO-G2
R-PDSO-N8
Number of Elements
1
1
Number of Terminals
2
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
38 A
28 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
NO LEAD
Terminal Position
SINGLE
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
16 Weeks
Samacsys Manufacturer
Infineon
JESD-609 Code
e3
Moisture Sensitivity Level
1
Terminal Finish
Tin (Sn)
Transistor Application
SWITCHING
Compare BUZ32H3045AATMA1 with alternatives
Compare BSC22DN20NS3GATMA1 with alternatives