BUZ31H3046 vs BSZ22DN20NS3GATMA1 feature comparison

BUZ31H3046 Infineon Technologies AG

Buy Now Datasheet

BSZ22DN20NS3GATMA1 Infineon Technologies AG

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-262AA
Package Description GREEN, PLASTIC, TO-262, 3 PIN SMALL OUTLINE, S-PDSO-N5
Pin Count 3 8
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks 18 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 200 mJ 30 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 14.5 A 7 A
Drain-source On Resistance-Max 0.2 Ω 0.225 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3 S-PDSO-N8
Number of Elements 1 1
Number of Terminals 3 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR SQUARE
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 58 A 28 A
Surface Mount NO YES
Terminal Form THROUGH-HOLE NO LEAD
Terminal Position SINGLE DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code No
Rohs Code Yes
Samacsys Manufacturer Infineon
Case Connection DRAIN
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING

Compare BUZ31H3046 with alternatives

Compare BSZ22DN20NS3GATMA1 with alternatives