BUZ305 vs STW9NA80 feature comparison

BUZ305 Infineon Technologies AG

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STW9NA80 STMicroelectronics

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG STMICROELECTRONICS
Part Package Code TO-218 TO-247
Package Description TO-218AB, 3 PIN TO-247, 3 PIN
Pin Count 3 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 830 mJ 415 mJ
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V 800 V
Drain Current-Max (ID) 7.5 A 9.1 A
Drain-source On Resistance-Max 1 Ω 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-218 TO-247
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 190 W
Pulsed Drain Current-Max (IDM) 30 A 36.4 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Case Connection DRAIN

Compare BUZ305 with alternatives

Compare STW9NA80 with alternatives