BUZ11 vs MTP36N06V feature comparison

BUZ11 TT Electronics Resistors

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MTP36N06V onsemi

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TT ELECTRONICS PLC ON SEMICONDUCTOR
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V 60 V
Drain Current-Max (ID) 30 A 32 A
Drain-source On Resistance-Max 0.04 Ω 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-MSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material METAL PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Rohs Code No
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Manufacturer Package Code CASE 221A-09
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 205 mJ
Case Connection DRAIN
JEDEC-95 Code TO-220AB
JESD-609 Code e0
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 235
Power Dissipation-Max (Abs) 90 W
Pulsed Drain Current-Max (IDM) 112 A
Terminal Finish TIN LEAD
Transistor Application SWITCHING

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