BUZ11
vs
BUZ11
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
TT ELECTRONICS PLC
|
ROCHESTER ELECTRONICS LLC
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
50 V
|
50 V
|
Drain Current-Max (ID) |
30 A
|
30 A
|
Drain-source On Resistance-Max |
0.04 Ω
|
0.04 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-MSFM-T3
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
COMMERCIAL
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Pbfree Code |
|
No
|
Rohs Code |
|
No
|
Case Connection |
|
DRAIN
|
JEDEC-95 Code |
|
TO-220AB
|
JESD-609 Code |
|
e0
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Pulsed Drain Current-Max (IDM) |
|
120 A
|
Terminal Finish |
|
TIN LEAD
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare BUZ11 with alternatives
Compare BUZ11 with alternatives