BUK9Y19-55B,115
vs
BUK9Y19-55B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
NXP SEMICONDUCTORS
NEXPERIA
Part Package Code
SOIC
Package Description
PLASTIC, LFPAK-4
SMALL OUTLINE, R-PSSO-G4
Pin Count
4
Manufacturer Package Code
SOT669
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.75
Additional Feature
LOGIC LEVEL COMPATIBLE
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
80 mJ
80 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
55 V
Drain Current-Max (ID)
46 A
46 A
Drain-source On Resistance-Max
0.021 Ω
0.021 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MO-235
JESD-30 Code
R-PSSO-G4
R-PSSO-G4
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
4
4
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
85 W
Pulsed Drain Current-Max (IDM)
184 A
184 A
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Date Of Intro
2017-02-01
Reference Standard
AEC-Q101