BUK9M15-60EX
vs
934066475127
feature comparison
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
NEXPERIA
|
NXP SEMICONDUCTORS
|
Package Description |
SMALL OUTLINE, R-PSSO-G4
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count |
8
|
|
Manufacturer Package Code |
SOT1210
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Nexperia
|
|
Avalanche Energy Rating (Eas) |
39 mJ
|
39 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
47 A
|
54 A
|
Drain-source On Resistance-Max |
0.015 Ω
|
0.015 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G4
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
188 A
|
216 A
|
Reference Standard |
AEC-Q101; IEC-60134
|
AEC-Q101; IEC-60134
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
TIN
|
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Additional Feature |
|
AVALANCHE RATED
|
JEDEC-95 Code |
|
TO-220AB
|
|
|
|
Compare BUK9M15-60EX with alternatives
Compare 934066475127 with alternatives