BUK9E2R3-40E,127
vs
934066419127
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Part Package Code
TO-262
Package Description
PLASTIC, TO-262, I2PAK-3
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Manufacturer Package Code
SOT226
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
622 mJ
622 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
40 V
Drain Current-Max (ID)
120 A
120 A
Drain-source On Resistance-Max
0.0025 Ω
0.0025 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
TO-220AB
JESD-30 Code
R-PSIP-T3
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
293 W
Pulsed Drain Current-Max (IDM)
988 A
988 A
Reference Standard
AEC-Q101; IEC-60134
AEC-Q101; IEC-60134
Surface Mount
NO
NO
Terminal Finish
Tin (Sn)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Compare BUK9E2R3-40E,127 with alternatives
Compare 934066419127 with alternatives