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BUK98150-55,115 vs BUK98150-55A/CU feature comparison

BUK98150-55,115 NXP Semiconductors

Buy Now Datasheet

BUK98150-55A/CU NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G4 PLASTIC, SC-73, 4 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTION
Avalanche Energy Rating (Eas) 15 mJ 22 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 2.6 A 5.5 A
Drain-source On Resistance-Max 0.15 Ω 0.161 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A 22 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Rohs Code Yes
JESD-609 Code e3
Moisture Sensitivity Level 1
Reference Standard AEC-Q101; IEC-60134
Terminal Finish TIN
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

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