BUK9508-55A
vs
BUK9508-55,127
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
PHILIPS SEMICONDUCTORS
NXP SEMICONDUCTORS
Package Description
,
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
75 A
75 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e3
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
200 W
187 W
Surface Mount
NO
NO
Terminal Finish
Matte Tin (Sn)
Base Number Matches
3
1
Part Package Code
TO-220AB
Pin Count
3
HTS Code
8541.29.00.95
Samacsys Manufacturer
NXP
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
500 mJ
Case Connection
DRAIN
DS Breakdown Voltage-Min
55 V
Drain-source On Resistance-Max
0.008 Ω
Feedback Cap-Max (Crss)
480 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Power Dissipation Ambient-Max
187 W
Pulsed Drain Current-Max (IDM)
240 A
Qualification Status
Not Qualified
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
435 ns
Turn-on Time-Max (ton)
230 ns
Compare BUK9508-55,127 with alternatives