BUK7E2R7-30B,127
vs
IRF2903Z
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NEXPERIA
|
INFINEON TECHNOLOGIES AG
|
Part Package Code |
TO-262
|
|
Package Description |
PLASTIC, I2PAK-3
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count |
3
|
|
Manufacturer Package Code |
SOT226
|
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.75
|
|
Date Of Intro |
2017-02-01
|
|
Samacsys Manufacturer |
Nexperia
|
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
FAST SWITCHING, ULTRA-LOW RESISTANCE
|
Avalanche Energy Rating (Eas) |
2300 mJ
|
300 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
75 A
|
260 A
|
Drain-source On Resistance-Max |
0.0027 Ω
|
0.0024 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-262AA
|
TO-220AB
|
JESD-30 Code |
R-PSIP-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
300 W
|
|
Pulsed Drain Current-Max (IDM) |
967 A
|
1020 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
13
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare BUK7E2R7-30B,127 with alternatives
Compare IRF2903Z with alternatives