BUK7513-75B vs IRFZ34VSTRL feature comparison

BUK7513-75B NXP Semiconductors

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IRFZ34VSTRL Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description PLASTIC, SC-46, 3 PIN PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 125 mJ 81 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V 60 V
Drain Current-Max (ID) 75 A 30 A
Drain-source On Resistance-Max 0.013 Ω 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 157 W
Pulsed Drain Current-Max (IDM) 304 A 120 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 2
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

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