BUK456-200A vs MTP20N20E feature comparison

BUK456-200A North American Philips Discrete Products Div

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MTP20N20E onsemi

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV ON SEMICONDUCTOR
Package Description , FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 19 A 20 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 125 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 3 4
Part Package Code TO-220AB
Pin Count 3
Manufacturer Package Code CASE 221A-09
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 600 mJ
Case Connection DRAIN
DS Breakdown Voltage-Min 200 V
Drain-source On Resistance-Max 0.16 Ω
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 235
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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