BUK456-100A-T
vs
NTP52N10
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
ON SEMICONDUCTOR
Package Description
FLANGE MOUNT, R-PSFM-T3
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
34 A
60 A
Drain-source On Resistance-Max
0.057 Ω
0.03 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
200 pF
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
150 W
Pulsed Drain Current-Max (IDM)
136 A
156 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
285 ns
Turn-on Time-Max (ton)
90 ns
Base Number Matches
1
1
Rohs Code
Part Package Code
TO-220AB
Pin Count
3
Manufacturer Package Code
CASE 221A-09
Samacsys Manufacturer
onsemi
Avalanche Energy Rating (Eas)
800 mJ
JESD-609 Code
e0
Peak Reflow Temperature (Cel)
235
Power Dissipation-Max (Abs)
178 W
Terminal Finish
Tin/Lead (Sn80Pb20)
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare BUK456-100A-T with alternatives
Compare NTP52N10 with alternatives