BUK456-100A vs BUZ22 feature comparison

BUK456-100A North American Philips Discrete Products Div

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BUZ22 Infineon Technologies AG

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 34 A 34 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 125 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Base Number Matches 3 2
Avalanche Energy Rating (Eas) 220 mJ
DS Breakdown Voltage-Min 100 V
Drain-source On Resistance-Max 0.055 Ω
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Pulsed Drain Current-Max (IDM) 136 A
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

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