BUK454-500B
vs
MTP2N45
feature comparison
Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SEMICONDUCTOR TECHNOLOGY INC
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
,
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
500 V
|
|
Drain Current-Max (ID) |
3.3 A
|
2 A
|
Drain-source On Resistance-Max |
2.8 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
55 pF
|
|
JEDEC-95 Code |
TO-220AB
|
|
JESD-30 Code |
R-PSFM-T3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
FLANGE MOUNT
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
75 W
|
|
Pulsed Drain Current-Max (IDM) |
13 A
|
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
|
Terminal Position |
SINGLE
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Turn-off Time-Max (toff) |
105 ns
|
|
Turn-on Time-Max (ton) |
80 ns
|
|
Base Number Matches |
1
|
1
|
Power Dissipation-Max (Abs) |
|
75 W
|
|
|
|
Compare BUK454-500B with alternatives
Compare MTP2N45 with alternatives