BUK436-100B
vs
IRF9642
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
SAMSUNG SEMICONDUCTOR INC
Package Description
FLANGE MOUNT, R-PSFM-T3
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
200 V
Drain Current-Max (ID)
31 A
9 A
Drain-source On Resistance-Max
0.065 Ω
0.7 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
P-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Part Package Code
SFM
Pin Count
3
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
380 mJ
JEDEC-95 Code
TO-220AB
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
125 W
Power Dissipation-Max (Abs)
125 W
Pulsed Drain Current-Max (IDM)
36 A
Terminal Finish
TIN LEAD
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
30 ns
Turn-on Time-Max (ton)
45 ns
Compare BUK436-100B with alternatives
Compare IRF9642 with alternatives