BU1706AB vs MJE13071-6200 feature comparison

BU1706AB NXP Semiconductors

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MJE13071-6200 Intersil Corporation

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS HARRIS SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 5 A 5 A
Collector-Emitter Voltage-Max 850 V 450 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 5 8
JESD-30 Code R-PSSO-G2 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
HTS Code 8541.29.00.95
Collector-Base Capacitance-Max 250 pF
JEDEC-95 Code TO-220AB
Power Dissipation Ambient-Max 80 W
Turn-off Time-Max (toff) 2000 ns
Turn-on Time-Max (ton) 450 ns
VCEsat-Max 3 V

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