BTA151-650R vs 2N3030 feature comparison

BTA151-650R NXP Semiconductors

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2N3030 Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS MICROSEMI CORP
Part Package Code SFM
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Manufacturer Package Code SOT82
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.30.00.80 8541.30.00.80
Additional Feature SENSITIVE GATE
Case Connection ANODE
Circuit Commutated Turn-off Time-Nom 70 µs 0.7 µs
Configuration SINGLE SINGLE
Critical Rate of Rise of Off-State Voltage-Min 50 V/us 30 V/us
DC Gate Trigger Current-Max 4 mA 0.02 mA
DC Gate Trigger Voltage-Max 1.5 V 0.6 V
Holding Current-Max 16 mA 4 mA
JESD-30 Code R-PSIP-T3 O-MBCY-W3
Leakage Current-Max 0.5 mA
Non-Repetitive Pk On-state Cur 100 A
Number of Elements 1 1
Number of Terminals 3 3
On-state Current-Max 7500 A
Operating Temperature-Max 125 °C 150 °C
Operating Temperature-Min -40 °C -65 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR ROUND
Package Style IN-LINE CYLINDRICAL
Qualification Status Not Qualified Not Qualified
RMS On-state Current-Max 12 A 0.785 A
Repetitive Peak Off-state Leakage Current-Max 500 µA 0.1 µA
Repetitive Peak Off-state Voltage 650 V 30 V
Repetitive Peak Reverse Voltage 650 V 30 V
Surface Mount NO NO
Terminal Form THROUGH-HOLE WIRE
Terminal Position SINGLE BOTTOM
Trigger Device Type SCR SCR
Base Number Matches 1 4
Pbfree Code No
JEDEC-95 Code TO-18
JESD-609 Code e0
Terminal Finish TIN LEAD

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