BT150-500R,127 vs BT150S-600R/T3 feature comparison

BT150-500R,127 WeEn Semiconductor Co Ltd

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BT150S-600R/T3 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer WEEN SEMICONDUCTORS CO LTD NXP SEMICONDUCTORS
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.30.00.80 8541.30.00.80
Samacsys Manufacturer WeEn Semiconductors
Additional Feature SENSITIVE GATE SENSITIVE GATE
Case Connection ANODE ANODE
Configuration SINGLE SINGLE
DC Gate Trigger Current-Max 0.2 mA 0.2 mA
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 125 °C 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
RMS On-state Current-Max 4 A 4 A
Reference Standard IEC-60134
Repetitive Peak Off-state Voltage 500 V 600 V
Repetitive Peak Reverse Voltage 500 V 600 V
Surface Mount NO YES
Terminal Finish TIN TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Trigger Device Type SCR SCR
Base Number Matches 2 1
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Circuit Commutated Turn-off Time-Nom 100 µs
DC Gate Trigger Voltage-Max 1.5 V
Holding Current-Max 6 mA
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Repetitive Peak Off-state Leakage Current-Max 500 µA

Compare BT150-500R,127 with alternatives

Compare BT150S-600R/T3 with alternatives