BT134W-600ET/R vs BT134W-600-T feature comparison

BT134W-600ET/R NXP Semiconductors

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BT134W-600-T NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Pin Count 4 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.30.00.80 8541.30.00.80
Additional Feature SENSITIVE GATE
Case Connection MAIN TERMINAL 2 MAIN TERMINAL 2
Configuration SINGLE SINGLE
Critical Rate of Rise of Off-State Voltage-Min 30 V/us 100 V/us
DC Gate Trigger Current-Max 5 mA 35 mA
DC Gate Trigger Voltage-Max 1.5 V 1.5 V
Holding Current-Max 10 mA 15 mA
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Leakage Current-Max 0.5 mA
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Temperature-Max 120 °C 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
RMS On-state Current-Max 1 A 1 A
Repetitive Peak Off-state Voltage 600 V 600 V
Surface Mount YES YES
Terminal Finish MATTE TIN TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Trigger Device Type TRIAC 4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches 1 1
Pbfree Code Yes
Repetitive Peak Off-state Leakage Current-Max 500 µA

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