BT134W-600 vs MBR120P feature comparison

BT134W-600 NXP Semiconductors

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MBR120P Motorola Semiconductor Products

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS MOTOROLA INC
Package Description SMALL OUTLINE, R-PDSO-G4 O-PALF-W2
Pin Count 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.30.00.80 8541.10.00.80
Case Connection MAIN TERMINAL 2 ISOLATED
Configuration SINGLE SINGLE
Critical Rate of Rise of Commutation Voltage-Min 10 V/us
Critical Rate of Rise of Off-State Voltage-Min 100 V/us
DC Gate Trigger Current-Max 35 mA
DC Gate Trigger Voltage-Max 1.5 V
Holding Current-Max 15 mA
JESD-30 Code R-PDSO-G4 O-PALF-W2
JESD-609 Code e3 e0
Leakage Current-Max 0.5 mA
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 4 2
Operating Temperature-Max 125 °C 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
RMS On-state Current-Max 1 A
Repetitive Peak Off-state Leakage Current-Max 500 µA
Repetitive Peak Off-state Voltage 600 V
Surface Mount YES NO
Terminal Finish TIN TIN LEAD
Terminal Form GULL WING WIRE
Terminal Position DUAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Trigger Device Type 4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches 18 1
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.85 V
Non-rep Pk Forward Current-Max 25 A
Number of Phases 1
Operating Temperature-Min -65 °C
Output Current-Max 1 A
Rep Pk Reverse Voltage-Max 20 V
Technology SCHOTTKY

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