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BST82-TAPE-7 vs BST82,215 feature comparison

BST82-TAPE-7 NXP Semiconductors

Buy Now Datasheet

BST82,215 NXP Semiconductors

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 SOT-23, 3 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V 80 V
Drain Current-Max (ID) 0.175 A 0.175 A
Drain-source On Resistance-Max 10 Ω 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF 6 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Rohs Code Yes
Part Package Code TO-236
Pin Count 3
Manufacturer Package Code SOT23
HTS Code 8541.21.00.95
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 0.3 W
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30
Transistors » Small Signal Field-Effect Transistors
Transistors » Small Signal Field-Effect Transistors

Compare BST82-TAPE-7 with alternatives

Compare BST82,215 with alternatives